IXTH36N50P
IXYS
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Polarhv power mosfet.
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IXTH36N50P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current ID= 36A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
:.
IXTH36P10 - Standard Power MOSFET
(IXYS Corporation)
Advance Technical Information
Standard Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTH 36P10
VDSS
ID25
RDS(on)
= -100 V = -36 A = 75 .
IXTH36P10 - P-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 75mΩ@VGS= -10V ·Fully characterized avalanche voltage and cur.
IXTH300N04T2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 2.5mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTH300N04T2 - Power MOSFET
(IXYS)
Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH300N04T2
VDSS = ID25 =
RDS(on) ≤
40V 300A.
IXTH30N45 - N-Channel MOSFET
(IXYS)
Preliminary Data Sheet
MegaMOSTMFET
N-Channel Enhancement Mode
VDSS
IXTH 30N45 450 V IXTH 30N50 500 V
ID25
RDS(on)
30 A 0.16 Ω 30 A 0.17 Ω
TO-247.
IXTH30N50 - Power MOSFET
(IXYS Corporation)
MegaMOSTMFET
N-Channel Enhancement Mode
IXTH 30N50
VDSS = 500 V
ID (cont) =
30 A
RDS(on) = 0.17 Ω
Symbol
V DSS
V DGR V
GS
VGSM ID25 I
DM
PD TJ T.
IXTH30N50 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 170mΩ(Max) ·Fast Sw.
IXTH30N50L - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IXTH30N50L
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switching .
IXTH30N50L - Power MOSFET
(IXYS)
Preliminary Technical Information
Power MOSFET with Extended FBSOA
N-Channel Enhancement Mode
IXTH30N50L IXTQ30N50L IXTT30N50L
D O DD
Symbol VDSS V.