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IXTH3N100P, IXTA3N100P MOSFET

IXTH3N100P Description

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N100P IXTP3N100P IXTH3N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD.

IXTH3N100P Features

* International Standard Packages
* Low RDS(ON) and QG
* Avalanche Rated
* Low Package Inductance Advantages
* High Power Density
* Easy to Mount

IXTH3N100P Applications

* Switch-Mode and Resonant-Mode Power Supplies
* DC-DC Converters
* Laser Drivers
* AC and DC Motor Drives
* Robotics and Servo Controls DS99767B(6/18) IXTA3N100P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5
* ID25, Note 1 C

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXTH3N100P, IXTA3N100P. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXTH3N100P, IXTA3N100P
Manufacturer
IXYS
File Size
330.81 KB
Datasheet
IXTA3N100P-IXYS.pdf
Description
MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTH3N100P, IXTA3N100P.
Please refer to the document for exact specifications by model.

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