IXTH3N100P Datasheet - IXYS

IXTH3N100P MOSFET

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N100P IXTP3N100P IXTH3N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 1000 20 30 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 3 6 3 200 10 125 -55 +150 150 -55 +150 A A A mJ V/ns W C C C Maxi.

IXTH3N100P Features

* International Standard Packages

* Low RDS(ON) and QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* Laser Drivers

IXTH3N100P Datasheet (330.81 KB)

IXTH3N100P Datasheet Preview — Preview of IXTH3N100P PDF

Datasheet Details

Part number:

IXTH3N100P

Manufacturer:

IXYS

File Size:

330.81 KB

Description:

Mosfet.

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IXTH3N100P MOSFET IXYS

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