Datasheet Details
Part number:
IXTH3N100P, IXTA3N100P
Manufacturer:
IXYS
File Size:
330.81 KB
Description:
Mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTH3N100P, IXTA3N100P.
Please refer to the document for exact specifications by model.
IXTH3N100P, IXTA3N100P, MOSFET
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N100P IXTP3N100P IXTH3N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 1000 20 30 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C 3 6 3 200 10 125 -55 +150 150 -55 +150 A A A mJ V/ns W C C C Maxi
IXTH3N100P Features
* International Standard Packages
* Low RDS(ON) and QG
* Avalanche Rated
* Low Package Inductance Advantages
* High Power Density
* Easy to Mount
* Space Savings Applications
* Switch-Mode and Resonant-Mode Power Supplies
* DC-DC Converters
* Laser Drivers
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