Datasheet Specifications
- Part number
- IXTH50N30
- Manufacturer
- IXYS
- File Size
- 576.99 KB
- Datasheet
- IXTH50N30-IXYS.pdf
- Description
- Power MOSFET
Description
Advance Technical Information High Current Power MOSFET N-Channel Enhancement Mode IXTH 50N30 IXTT 50N30 VDSS ID25 RDS(on) = 300 V = 50 A = 65 mΩ .
Features
* z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2003 IXYS All rights reservIXTH50N30 Distributors
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