* z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2003 IXYS All rights reserv
IXTH50N30 Datasheet (576.99 KB)
IXTH50N30
IXYS
576.99 KB
Power mosfet.
Advance Technical Information
High Current Power MOSFET
N-Channel Enhancement Mode
IXTH 50N30 IXTT 50N30
VDSS ID25
RDS(on)
= 300 V
= 50 A = 65 mΩ
.
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