* International standard package Isolation voltage 3000V (RMS) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low drain-to-case capacitance (
IXTN58N50 Datasheet (59.40 KB)
IXTN58N50
IXYS
59.40 KB
(ixtn58n50 / ixtn61n50) power mosfet.
High Current Power MOSFET N-Channel Enhancement Mode VDSS IXTN 58N50 IXTN 61N50 500 V 500 V ID25 RDS(on) 58 A 85 mΩ 61 A 75 mΩ Preliminary Data S.
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