Description
High Current Power MOSFET N-Channel Enhancement Mode VDSS IXTN 58N50 IXTN 61N50 500 V 500 V ID25 RDS(on) 58 A 85 mΩ 61 A 75 mΩ Preliminary Data S.
Features
* International standard package Isolation voltage 3000V (RMS) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low drain-to-case capacitance (Applications
* DC choppers AC motor speed controls DC servo and robot drives Uninterruptible power supplies (UPS) Switched mode and resonant mode power supplies V V G S miniBLOC, SOT-227 B E153432 V V A A A A W S D G = Gate S = Source D = Drain Either Source tIXTN58N50 Distributors
📁 Related Datasheet
📌 All Tags
