IXTN58N50 Datasheet - IXYS

IXTN58N50 (IXTN58N50 / IXTN61N50) Power MOSFET

High Current Power MOSFET N-Channel Enhancement Mode VDSS IXTN 58N50 IXTN 61N50 500 V 500 V ID25 RDS(on) 58 A 85 mΩ 61 A 75 mΩ Preliminary Data Symbol V DSS V DGR V GS V GSM I D25 I DM PD TJ TJM Tstg VISOL 50/60 Hz, RMS t = 1 minute t = 1s Md Mounting torque Terminal connection torque (M4) Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C TC = 25°C Pulse width limited by TJM T C = 25°C -40 +150 150 -40 +150 IXTN IXTN IXTN IXTN 58N50 .

IXTN58N50 Features

* International standard package Isolation voltage 3000V (RMS) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low drain-to-case capacitance (

IXTN58N50 Datasheet (59.40 KB)