IXTP1N80 Datasheet - IXYS

IXTP1N80 High Voltage MOSFET

www.DataSheet4U.com High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS(on) = 800 V = 750 mA = 11 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM Maximum Ratings 800 800 ± 20 ± 30 750 3 1.0 V V V V mA A A mJ mJ V/ns W °C °C °C TO-220AB (IXTP) GD.

IXTP1N80 Features

* Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions ! International standard packages ! High voltage, Low RDS (on) HDMOSTM process Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 9.5

IXTP1N80 Datasheet (81.05 KB)

IXTP1N80 Datasheet Preview — Preview of IXTP1N80 PDF

Datasheet Details

Part number:

IXTP1N80

Manufacturer:

IXYS

File Size:

81.05 KB

Description:

High voltage mosfet.

📁 Related Datasheet

IXTP1N80P Power MOSFET (IXYS)

IXTP1N100 High Voltage MOSFET (IXYS Corporation)

IXTP1N100P TO-220C N-Channel MOSFET (INCHANGE)

IXTP1N100P Power MOSFET (IXYS)

IXTP1N100P TO-252 N-Channel MOSFET (INCHANGE)

IXTP100N04T2 Power MOSFET (IXYS)

IXTP100N04T2 N-Channel MOSFET (INCHANGE)

IXTP100N15X4 Power MOSFET (IXYS)

IXTP102N15T N-Channel MOSFET (INCHANGE)

IXTP102N15T Power MOSFET (IXYS)

TAGS

IXTP1N80 High Voltage MOSFET IXYS

Image Gallery

IXTP1N80 Distributor