IXTP1N80, IXTY1N80 High Voltage MOSFET

IXYS

Description

www.DataSheet4U.com High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 .

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IXTP1N80 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXTP1N80, IXTY1N80. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXTP1N80, IXTY1N80
Manufacturer: IXYS
File Size: 81.05 KB
Datasheet: IXTY1N80_IXYS.pdf
Description: High Voltage MOSFET
Note: This datasheet PDF includes multiple part numbers: IXTP1N80, IXTY1N80.
Please refer to the document for exact specifications by model.

Features

* Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Symbol Test Conditions ! International standard packages ! High voltage, Low RDS (on) HDMOSTM process Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 9.5

Applications

* cell structure VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 25 µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V ! Switch-mode ! ! DC choppers ! High frequency Advantages and resonant-mode power supplies Flyback inverters matching VGS = 10 V, ID = 500 mA Pulse test, t ≤

IXTP1N80 Distributors

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IXTY1N80 High Voltage MOSFET IXYS

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