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IXTP1N80

High Voltage MOSFET

IXTP1N80 Features

* Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions ! International standard packages ! High voltage, Low RDS (on) HDMOSTM process Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 9.5

IXTP1N80 Datasheet (81.05 KB)

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Datasheet Details

Part number:

IXTP1N80

Manufacturer:

IXYS

File Size:

81.05 KB

Description:

High voltage mosfet.
www.DataSheet4U.com High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 .

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IXTP1N80 High Voltage MOSFET IXYS

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