IXTP1N100 Datasheet - IXYS Corporation

IXTP1N100 High Voltage MOSFET

Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N100 IXTP 1N100 VDSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM Maximum Ratings 1000 1000 ±20 ±30 1.5 6 1.5 V V V V A A A mJ mJ V/ns W °C °C °C TO-220AB (IXTP) GD D (TAB) S TO.

IXTP1N100 Features

* Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard packages High voltage, Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise spe

IXTP1N100_IXYSCorporation.pdf