Datasheet Specifications
- Part number
- IXTP1N100
- Manufacturer
- IXYS Corporation
- File Size
- 46.64 KB
- Datasheet
- IXTP1N100_IXYSCorporation.pdf
- Description
- High Voltage MOSFET
Description
Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N100 IXTP 1N100 VDSS ID25 RDS(on) = 100.
Features
* Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s International standard packages High voltage, Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise speApplications
* Switch-mode and resonant-mode power supplies VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 25 µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V Flyback inverters DC choppers High frequency matching Advantages VGS = 10 V, ID = 1.0A Pulse test, t ≤ 300 µs, duty cycleIXTP1N100 Distributors
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