* Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard packages High voltage, Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise spe
IXTP1N100 Datasheet (46.64 KB)
IXTP1N100
IXYS Corporation
46.64 KB
High voltage mosfet.
Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N100 IXTP 1N100 VDSS ID25 RDS(on) = 100.
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