IXTP32N20T Datasheet - IXYS

IXTP32N20T Power MOSFET

TrenchTM Power MOSFET IXTA32N20T IXTP32N20T VDSS = 200V ID25 = 32A RDS(on) ≤ 78mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Mo.

IXTP32N20T Features

* z International Standard Packages z 175°C Operating Temperature z Avalanche Rated z Low RDS(on) z Fast Intrinsic Rectifier z High Current Handling Capability Advantages z Easy to Mount z Space Savings z High Power Density Applications z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-

IXTP32N20T Datasheet (207.56 KB)