IXTQ60N10T Datasheet - IXYS

IXTQ60N10T Power MOSFET

Advance Technical Information TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTQ60N10T VDSS = 100V ID25 = 60A RDS(on) ≤ 18.0mΩ TO-3P Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque Maximum Ratings 100.

IXTQ60N10T Features

* z 175°C Operating Temperature z Avalanche Rated z Low RDS(on) z Fast Intrinsic Diode z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Applications z DC/DC Converters and Off-Line UPS z Primary Switch for 24V and 48V Systems z High Current Switching Application

IXTQ60N10T-IXYS.pdf