* z 175°C Operating Temperature z Avalanche Rated z Low RDS(on) z Fast Intrinsic Diode z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Applications z DC/DC Converters and Off-Line UPS z Primary Switch for 24V and 48V Systems z High Current Switching Application
IXTQ60N10T Datasheet (170.07 KB)
IXTQ60N10T
IXYS
170.07 KB
Power mosfet.
Advance Technical Information
TrenchTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTQ60N10T
VDSS = 100V ID25 = 6.
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