* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(
IXTR200N10P Datasheet (135.86 KB)
IXTR200N10P
IXYS
135.86 KB
Power mosfet.
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PolarTM HiPerFET Power MOSFET
Electrically Isolated Tab
IXTR 200N10P
VDSS ID25
RDS(on)
= 100 V.
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