IXTR200N10P Datasheet - IXYS

IXTR200N10P Power MOSFET

Advanced Technical Information www.DataSheet4U.com PolarTM HiPerFET Power MOSFET Electrically Isolated Tab IXTR 200N10P VDSS ID25 RDS(on) = 100 V = 133 A = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 100 100 ± 20 ± 30 V V V V A A A A mJ J V/ns W °C °C °C V~ Nm/lb g z z ISOPLUS 247TM E153432.

IXTR200N10P Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(

IXTR200N10P_IXYS.pdf