* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Avalanche Rated z Extended FBSOA z Fast Intrinsic Rectifier z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switching z Push
IXTR210P10T Datasheet (192.53 KB)
IXTR210P10T
IXYS
192.53 KB
Power mosfet.
Preliminary Technical Information
TrenchPTM Power MOSFET
IXTR210P10T
VDSS = ID25 = ≤RDS(on)
-100V -195A
8mΩ
P-Channel Enhancement Mode Avalanche .
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