IXTR210P10T Datasheet - IXYS

IXTR210P10T, Power MOSFET

Preliminary Technical Information TrenchPTM Power MOSFET IXTR210P10T VDSS = ID25 = ≤RDS(on) -100V -195A 8mΩ P-Channel Enhancement Mode Avalanche .

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IXTR210P10T-IXYS.pdf

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Datasheet Details

Part number:

IXTR210P10T

Manufacturer:

IXYS

File Size:

192.53 KB

Description:

Power MOSFET

Applications

* z High-Side Switching z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators z Battery Charger Applications © 2013 IXYS CORPORATION, All Rights Reserved DS100398A(01/13) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = -10V, ID = - 60A, Not

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IXTR210P10T Power MOSFET IXYS

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