* z Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation z Avalanche rated z The rugged PolarPTM process z Low Q G z Low Drain-to-Tab capacitance z Low package inductance - easy to drive and to protect Applications z High
IXTR20P50P Datasheet (118.93 KB)
IXTR20P50P
IXYS
118.93 KB
Power mosfet.
Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR20P50P VDSS = ID25 = ≤RDS(on) - 500V - 13A .
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