Datasheet Specifications
- Part number
- IXTR48P20P
- Manufacturer
- IXYS
- File Size
- 144.40 KB
- Datasheet
- IXTR48P20P_IXYS.pdf
- Description
- Power MOSFET
Description
Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR48P20P VDSS ID25 RDS(on) = = ≤ - 200V - 3.
Features
* z 1.6mm (0.062 in. ) from case for 10s Plastic body for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting force t = 1min t = 1s 300 260 2500 3000 20..120 / 4.5..27 5 Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation Avalanche rApplications
* z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = - 250μA VDS = VGS, ID = - 250μA VGS = ±20V, VDS = 0V VDS = VDSS VGS = 0V VGS = -10V, ID = - 24A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. - 200 - 2.5 - 4.5 V V z z z zIXTR48P20P Distributors
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