IXTR48P20P Datasheet - IXYS

IXTR48P20P Power MOSFET

Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR48P20P VDSS ID25 RDS(on) = = ≤ - 200V - 30A 93mΩ ISOPLUS247 (IXTR) E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings - 200 - 2.

IXTR48P20P Features

* z 1.6mm (0.062 in.) from case for 10s Plastic body for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting force t = 1min t = 1s 300 260 2500 3000 20..120 / 4.5..27 5 Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation Avalanche r

IXTR48P20P Datasheet (144.40 KB)