IXTR40P50P Power MOSFET

IXYS

Description

PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR40P50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD.

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Datasheet Specifications

Part number: IXTR40P50P
Manufacturer: IXYS
File Size: 113.31 KB
Datasheet: IXTR40P50P-IXYS.pdf
Description: Power MOSFET

Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation z Dynamic dv/dt Rating z Avalanche Rated z Fast Intrinsic Diode z The Rugged PolarPTM Process z Low QG z Low Drain-to-Tab Capacitance z Low Package Inductance Advant

Applications

* z High-Side Switches z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators © 2012 IXYS CORPORATION, All Rights Reserved DS99937C(12/12) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = -10V, ID = - 20A, Note 1 Ciss Coss Crss VGS = 0V, VD

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IXTR40P50P Power MOSFET IXYS

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