* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation z Dynamic dv/dt Rating z Avalanche Rated z Fast Intrinsic Diode z The Rugged PolarPTM Process z Low QG z Low Drain-to-Tab Capacitance z Low Package Inductance Advant
IXTR40P50P Datasheet (113.31 KB)
IXTR40P50P
IXYS
113.31 KB
Power mosfet.
PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTR40P50P
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD.
📁 Related Datasheet
IXTR48P20P Power MOSFET (IXYS)
IXTR102N65X2 Power MOSFET (IXYS)
IXTR120P20T Power MOSFET (IXYS)
IXTR140P10T Power MOSFET (IXYS)
IXTR16P60P Power MOSFET (IXYS)
IXTR170P10P Power MOSFET (IXYS)
IXTR200N10P Power MOSFET (IXYS)
IXTR20P50P Power MOSFET (IXYS)
IXTR210P10T Power MOSFET (IXYS)
IXTR30N25 Power MOSFET (IXYS)
