IXTR40P50P Datasheet - IXYS

IXTR40P50P Power MOSFET

PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR40P50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 HZ ,RMS, t= 1min Mounting Force Maximum Ratings - 500 - 500 ±20 ±30 - 2.

IXTR40P50P Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation z Dynamic dv/dt Rating z Avalanche Rated z Fast Intrinsic Diode z The Rugged PolarPTM Process z Low QG z Low Drain-to-Tab Capacitance z Low Package Inductance Advant

IXTR40P50P Datasheet (113.31 KB)