IXTU05N100 Datasheet, Mosfet, IXYS

IXTU05N100 Features

• Mosfet
• International Standard Packages
• Fast Switching Times
• Avalanche Rated
• Rds(on) HDMOSTM Process
• Rugged Polysilicon Gate Cell structure

PDF File Details

Part number:

IXTU05N100

Manufacturer:

IXYS

File Size:

159.48kb

Download:

📄 Datasheet

Description:

Power mosfet.

IXTU05N100 Application

• Applications
• Switch-Mode and Resonant-Mode Power Supplies
• Flyback Inverters
• DC Choppers © 2017 IXYS CORPORATION, All

TAGS

IXTU05N100

IXYS

📁 Related Datasheet

IXTU05N100 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTU05N100 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 17Ω@VGS=10V ·Fully characterized avalanche voltag.

IXTU01N100 - Power MOSFET (IXYS Corporation)
High Voltage Power MOSFET IXTU01N100 IXTY01N100 VDSS = ID25 =  RDS(on) 1000V 100mA 80 N-Channel Enhancement Mode TO-251 (IXTU) Symbol VDSS VDG.

IXTU01N100D - N-Channel MOSFET (IXYS Corporation)
Depletion Mode MOSFET N-Channel IXTY01N100D IXTU01N100D IXTP01N100D D G S Symbol VDSX VDGX VGSX VGSM IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Co.

IXTU01N80 - Power MOSFET (IXYS Corporation)
.. High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 RDS(on) = 800 V = 100mA = 50 Ω Preliminary da.

IXTU02N50D - Power MOSFET (IXYS Corporation)
High Voltage Power MOSFET N-Channel IXTY02N50D IXTU02N50D IXTP02N50D D VDSX = ID25 =  RDS(on) 500V 200mA 30 TO-252 (IXTY) G S Symbol VDSX V.

IXTU12N06T - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 85mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot varia.

IXTU12N06T - Power MOSFET (IXYS)
Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU12N06T IXTY12N06T VDSS = ID25 = RDS(on) ≤ .

IXTU1N80P - Power MOSFET (IXYS)
Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P VDSS = ID.

IXTU1R4N60P - Power MOSFET (IXYS)
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt.

IXTU1R4N60P - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IXTU1R4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V ·Fully characterized avalanche volt.