IXTU05N100 Power MOSFET

IXYS

Description

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU05N100 IXTY05N100 VDSS = ID25 =  RDS(on) 1000V 750mA 17 TO-251 (IXTU) .

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Datasheet Specifications

Part number: IXTU05N100
Manufacturer: IXYS
File Size: 159.48 KB
Datasheet: IXTU05N100-IXYS.pdf
Description: Power MOSFET

Features

* International Standard Packages
* Fast Switching Times
* Avalanche Rated
* Rds(on) HDMOSTM Process
* Rugged Polysilicon Gate Cell structure
* Extended FBSOA Advantages
* High Power Density

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Flyback Inverters
* DC Choppers © 2017 IXYS CORPORATION, All Rights Reserved DS100102B(9/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 500mA, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f =

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IXTU05N100 Power MOSFET IXYS

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