IXYS manufacturer logo Part number: IXTY8N70X2 Manufacturer: IXYS File Size: 383.73kb Download: 📄 Datasheet Description: Power mosfet.
IXTY8N70X2 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥ 700V ·Static Drain-Source On-Resistance : RDS(on) ≤ 500mΩ@VGS= 10V ·Fast Sw.
IXTY8N65X2 - Power MOSFET (IXYS) Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTY8N65X2 IXTA8N65X2 IXTP8N65X2 VDSS = ID25 = RDS(on) 650V 8A.
IXTY8N65X2 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤500mΩ@VGS= 10V ·Fast.
IXTY01N100 - Power MOSFET (IXYS Corporation) High Voltage Power MOSFET IXTU01N100 IXTY01N100 VDSS = ID25 = RDS(on) 1000V 100mA 80 N-Channel Enhancement Mode TO-251 (IXTU) Symbol VDSS VDG.
IXTY01N100D - N-Channel MOSFET (IXYS Corporation) Depletion Mode MOSFET N-Channel IXTY01N100D IXTU01N100D IXTP01N100D D G S Symbol VDSX VDGX VGSX VGSM IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Co.
IXTY01N80 - Power MOSFET (IXYS Corporation) .. High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 RDS(on) = 800 V = 100mA = 50 Ω Preliminary da.
IXTY02N120P - Power MOSFET (IXYS) PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY02N120P IXTP02N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM T.
IXTY02N50D - Power MOSFET (IXYS Corporation) High Voltage Power MOSFET N-Channel IXTY02N50D IXTU02N50D IXTP02N50D D VDSX = ID25 = RDS(on) 500V 200mA 30 TO-252 (IXTY) G S Symbol VDSX V.
IXTY05N100 - Power MOSFET (IXYS) High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU05N100 IXTY05N100 VDSS = ID25 = RDS(on) 1000V 750mA 17 TO-251 (IXTU) .
IXTY05N100 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor IXTY05N100 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 17Ω@VGS=10V ·Fully characterized avalanche voltag.
