IXYH30N120B4 Datasheet - IXYS

IXYH30N120B4 High-Speed Low-Vsat PT IGBT

Advance Technical Information 1200V XPTTM GenX4TM IGBT IXYH30N120B4 High-Speed Low-Vsat PT IGBT for up to 5-30kHz Switching VCES = 1200V IC110 = 30A V CE(sat)  2.1V tfi(typ) = 108ns TO-247 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5.

IXYH30N120B4 Features

* Optimized for Low Conduction Switching Losses

* Positive Thermal Coefficient of Vce(sat)

* International Standard Package Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* Power Inverters

* UPS

* Motor Drives

* SMPS

* PFC Circuits

IXYH30N120B4-IXYS.pdf