* Optimized for Low Switching Losses
* Square RBSOA
* Positive Thermal Coefficient of Vce(sat)
* Anti-Parallel Ultra Fast Diode
* Avalanche Rated
* High Current Handling Capability
* International Standard Package Advantages
* High Power Density
* Low Gate Drive R
IXYH30N120C3D1 Datasheet (1.27 MB)
IXYH30N120C3D1
IXYS
1.27 MB
Igbt.
1200V XPTTM IGBT GenX3TM w/ Diode
IXYH30N120C3D1
High-Speed IGBT for 20-50 kHz Switching
Symbol
VCES V
CGR
VGES VGEM IC25 IC110 IF110 I
CM
IA EAS S.
📁 Related Datasheet
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Pinout Diagram .
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Ultra Low-Vsat PT IGBT for up to 5kHz Switching
IXYA30N120A4HV IXYP30N120A4 IXYH30N120A4
Sym.
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(IXYS)
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Preliminary Technical Information
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VCES = 1700V
IC110 = 30A
V CE(sat)
4.0V
tfi(typ) = 95ns
Symbol
VCE.
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(IXYS)
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4500V 30A 3.9V
Symbol Test Conditions
.
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V.
