IXYH30N120C3D1 Datasheet - IXYS

IXYH30N120C3D1 - IGBT

1200V XPTTM IGBT GenX3TM w/ Diode IXYH30N120C3D1 High-Speed IGBT for 20-50 kHz Switching Symbol VCES V CGR VGES VGEM IC25 IC110 IF110 I CM IA EAS SSOA (RBSOA) PC TJ TJM T stg TL Md Weight Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C, R GE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C T = 25°C, 1ms C TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for

IXYH30N120C3D1 Features

* Optimized for Low Switching Losses

* Square RBSOA

* Positive Thermal Coefficient of Vce(sat)

* Anti-Parallel Ultra Fast Diode

* Avalanche Rated

* High Current Handling Capability

* International Standard Package Advantages

* High Power Density

* Low Gate Drive R

IXYH30N120C3D1-IXYS.pdf