IXYH30N170C Datasheet - IXYS

High Voltage IGBT

IXYH30N170C Features

* High Voltage Package

* High Blocking Voltage

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, V

IXYH30N170C Datasheet (209.97 KB)

IXYH30N170C Datasheet Preview — Preview of IXYH30N170C PDF

Datasheet Details

Part number:

IXYH30N170C

Manufacturer:

IXYS

File Size:

209.97 KB

Description:

High voltage igbt.
High Voltage XPTTM IGBT Preliminary Technical Information IXYH30N170C VCES = 1700V IC110 = 30A V CE(sat)  4.0V tfi(typ) = 95ns Symbol VCE.

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