* High Voltage Package
* High Blocking Voltage
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, V
IXYH30N170C Datasheet (209.97 KB)
IXYH30N170C
IXYS
209.97 KB
High voltage igbt.
High Voltage XPTTM IGBT
Preliminary Technical Information
IXYH30N170C
VCES = 1700V
IC110 = 30A
V CE(sat)
4.0V
tfi(typ) = 95ns
Symbol
VCE.
📁 Related Datasheet
IXYH30N120A4 - Ultra Low-Vsat PT IGBT
(IXYS)
Advance Technical Information
1200V XPTTM GenX4TM IGBT
Ultra Low-Vsat PT IGBT for up to 5kHz Switching
IXYA30N120A4HV IXYP30N120A4 IXYH30N120A4
Sym.
IXYH30N120B4 - High-Speed Low-Vsat PT IGBT
(IXYS)
Advance Technical Information
1200V XPTTM GenX4TM IGBT
IXYH30N120B4
High-Speed Low-Vsat PT IGBT for up to 5-30kHz Switching
VCES = 1200V
IC110 = .
IXYH30N120C3 - High-Speed IGBT
(IXYS)
1200V XPTTM GenX3TM IGBTs
High-Speed IGBT for 20-50 kHz Switching
IXYP30N120C3 IXYH30N120C3
VCES = 1200V IC110 = 30A VCE(sat) 3.3V tfi(typ) = 8.
IXYH30N120C3D1 - IGBT
(IXYS)
1200V XPTTM IGBT GenX3TM w/ Diode
IXYH30N120C3D1
High-Speed IGBT for 20-50 kHz Switching
Symbol
VCES V
CGR
VGES VGEM IC25 IC110 IF110 I
CM
IA EAS S.
IXYH30N120C4 - High-Speed Low-Vsat PT IGBT
(IXYS)
Advance Technical Information
1200V XPTTM GenX4TM IGBT
IXYH30N120C4
High-Speed Low-Vsat PT IGBT for up to 20-50kHz Switching
VCES = 1200V
IC110 =.
IXYH30N120C4H1 - Gen4 IGBT
(IXYS)
IXYH30N120C4H1
1200 V, 30 A XPTTM Gen4 IGBT with Sonic Diode
Extreme Light Punch Through IGBT for 20–50 kHz Switching
IGBT Datasheet
Pinout Diagram .
IXYH30N450HV - IGBT
(IXYS)
High Voltage XPTTM IGBT
Advance Technical Information
IXYT30N450HV IXYH30N450HV
VCES = IC110 = VCE(sat)
4500V 30A 3.9V
Symbol Test Conditions
.
IXYH30N65B3D1 - IGBT
(IXYS)
Advance Technical Information
XPTTM 650V IGBT GenX3TM w/ Diode
Extreme Light Punch Through IGBT for 5-30kHz Switching
IXYH30N65B3D1 IXYQ30N65B3D1
V.
