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IXYH30N170C Datasheet - IXYS

IXYH30N170C - High Voltage IGBT

High Voltage XPTTM IGBT Preliminary Technical Information IXYH30N170C VCES = 1700V IC110 = 30A V CE(sat)  4.0V tfi(typ) = 95ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2.7 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounti

IXYH30N170C Features

* High Voltage Package

* High Blocking Voltage

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, V

IXYH30N170C-IXYS.pdf

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Datasheet Details

Part number:

IXYH30N170C

Manufacturer:

IXYS

File Size:

209.97 KB

Description:

High voltage igbt.

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IXYH30N170C High Voltage IGBT IXYS