IXYH30N170C High Voltage IGBT

IXYS

Description

High Voltage XPTTM IGBT Preliminary Technical Information IXYH30N170C VCES = 1700V IC110 = 30A V CE(sat)  4.0V tfi(typ) = 95ns Symbol VCE.

📥 Download Datasheet

IXYH30N170C Datasheet Preview — Preview of IXYH30N170C PDF

Datasheet Specifications

Part number: IXYH30N170C
Manufacturer: IXYS
File Size: 209.97 KB
Datasheet: IXYH30N170C-IXYS.pdf
Description: High Voltage IGBT

Features

* High Voltage Package
* High Blocking Voltage
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, V

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2017 IXYS CORPORATION, All Rights Reserved DS100666B(3/17) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs

IXYH30N170C Distributors

📁 Related Datasheet

IXYH20N120C3 IXYH50N120C3 IXYH50N120C3D1 IXYH82N120C3 IXYA20N120C3HV IXYB82N120C3H1

📌 All Tags

IXYH30N170C High Voltage IGBT IXYS

IXYS IXYH30N170C-like datasheet