IXYH30N65B3D1 Datasheet - IXYS

IXYH30N65B3D1 IGBT

Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode Extreme Light Punch Through IGBT for 5-30kHz Switching IXYH30N65B3D1 IXYQ30N65B3D1 VCES = 650V IC110 = 30A VCE(sat)  2.1V tfi(typ) = 33ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TVJ = 1.

IXYH30N65B3D1 Features

* Optimized for Low 5-30kHz Switching

* Square RBSOA

* Anti-Parallel Fast Diode

* Avalanche Rated

* Short Circuit Capability Advantages

* High Power Density

* Extremely Rugged

* Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specifi

IXYH30N65B3D1 Datasheet (198.55 KB)