IXYH30N65C3H1, IXYT30N65C3H1HV Datasheet - IXYS

IXYH30N65C3H1 IGBT

Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/ Sonic Diode Extreme Light Punch Through IGBT for 20-60kHz Switching IXYT30N65C3H1HV IXYH30N65C3H1 VCES = 650V IC110 = 30A VCE(sat)  2.7V tfi(typ) = 24ns TO-268HV Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = .

IXYH30N65C3H1 Features

* Optimized for 20-60kHz Switching

* Square RBSOA

* High Voltage

* Avalanche Rated

* Short Circuit Capability

* Anti-Parallel Sonic Diode Advantages

* High Power Density

* Extremely Rugged

* Low Gate Drive Requirement Applications

* Power Inverters

* UPS

IXYT30N65C3H1HV-IXYS.pdf

IXYH30N65C3H1 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXYH30N65C3H1, IXYT30N65C3H1HV. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXYH30N65C3H1, IXYT30N65C3H1HV

Manufacturer:

IXYS

File Size:

262.94 KB

Description:

Igbt.

Note:

This datasheet PDF includes multiple part numbers: IXYH30N65C3H1, IXYT30N65C3H1HV.
Please refer to the document for exact specifications by model.

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IXYH30N65C3H1 IXYT30N65C3H1HV IGBT IXYS

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