IXYN120N120C3 Datasheet - IXYS

IXYN120N120C3 IGBT

1200V XPTTM IGBTs GenX3TM High-Speed IGBTs for 20-50 kHz Switching Advance Technical Information IXYN120N120C3 VCES = 1200V IC110 = 120A VCE(sat)  3.20V tfi(typ) = 96ns E Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC= 25°C (Chip Capability) Terminal Current Limit TC= 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1 Clamped.

IXYN120N120C3 Features

* Optimized for Low Switching Losses

* Square RBSOA

* miniBLOC, with Aluminium Nitride Isolation

* International Standard Package

* Isolation Voltage 2500V~

* Positive Thermal Coefficient of Vce(sat)

* Avalanche Rated

* High Current Handling Capability Advantages

IXYN120N120C3-IXYS.pdf