IXYN100N65A3 Datasheet - IXYS

IXYN100N65A3 - IGBT

650V XPTTM IGBT GenX3TM Ultra Low-Vsat PT IGBT for up to 5kHz Switching Preliminary Technical Information IXYN100N65A3 VCES = 650V IC110 = 100A VCE(sat)  1.80V tfi(typ) = 122ns E Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load VGE = 15V.

IXYN100N65A3 Features

* Optimized for Low Conduction Losses

* miniBLOC, with Aluminium Nitride Isolation

* International Standard Package

* Isolation Voltage 2500V~

* Optimized for up to 5kHz Switching

* Square RBSOA

* Avalanche Rated

* Short Circuit Capability

* High Current Handling

IXYN100N65A3-IXYS.pdf