IXYN100N120C3H1 Datasheet - IXYS

IXYN100N120C3H1 High-Speed IGBT

1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120C3H1 High-Speed IGBT for 20-50 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 1 Clamped Inductive Load TC = 25°C 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connect.

IXYN100N120C3H1 Features

* Optimized for Low Switching Losses

* Square RBSOA

* Isolation Voltage 2500V~

* Anti-Parallel Sonic Diode

* Positive Thermal Coefficient of Vce(sat)

* Avalanche Rated

* High Current Handling Capability

* International Standard Package Advantages

* High Power Dens

IXYN100N120C3H1-IXYS.pdf