IXYN100N120B3H1 Datasheet - IXYS

IXYN100N120B3H1 IGBT

Preliminary Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120B3H1 Extreme Light Punch Through IGBT for 5-30 kHz Switching E VCES IC110 VCE(sat) tfi(typ) = = ≤ = 1200V 76A 2.6V 240ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ .

IXYN100N120B3H1 Features

* z Optimized for 5-30kHZ Switching z Square RBSOA z 2500V~ Isolation Voltage z Anti-Parallel Ultra Fast Diode z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement A

IXYN100N120B3H1-IXYS.pdf