IXYN100N120C3 Datasheet - IXYS

IXYN100N120C3 High-Speed IGBT

1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching IXYN100N120C3 E VCES = 1200V IC110 = 84A V CE(sat)  3.50V tfi(typ) = 110ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load TC = 25°C 50/60Hz IISOL 1mA t = 1mi.

IXYN100N120C3 Features

* Optimized for Low Switching Losses

* Square RBSOA

* Isolation Voltage 2500V~

* Positive Thermal Coefficient of Vce(sat)

* Avalanche Rated

* High Current Handling Capability

* International Standard Package Advantages

* High Power Density

* Low Gate Drive Require

IXYN100N120C3-IXYS.pdf