IXYN75N65C3D1 Datasheet - IXYS

IXYN75N65C3D1 IGBT

Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode IXYN75N65C3D1 Extreme Light Punch through IGBT for 20-60kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TVISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load VGE = 15V, VCE = 3.

IXYN75N65C3D1 Features

* International Standard Package

* miniBLOC, with Aluminium Nitride Isolation

* 2500V~ Isolation Voltage

* Optimized for 20-60kHz Switching

* Square RBSOA

* Avalanche Rated

* Short Circuit Capability

* High Current Handling Capability

* Anti-Parallel Fast Diode Ad

IXYN75N65C3D1-IXYS.pdf