IXYP20N120A4 Datasheet - IXYS

IXYP20N120A4 IGBT

1200V XPTTM GenX4TM IGBT Ultra-Low Vsat PT IGBT for up to 5kHz Switching IXYA20N120A4HV IXYP20N120A4 VCES = 1200V IC110 = 20A VCE(sat)  1.9V tfi(typ) = 160ns Symbol VCES VCGR VGES VGEM IIICCC21M510 SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD MFCd Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 1200 ±20 ±30 V V V V TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C 80 20 135.

IXYP20N120A4 Features

* Optimized for Low Conduction Losses

* Positive Thermal Coefficient of Vce(sat)

* International Standard Packages Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* Power Inverters

* UPS

* Motor Drives

* SMPS

* Battery Chargers

IXYP20N120A4 Datasheet (2.26 MB)