IXYT85N120A4HV Datasheet - IXYS

IXYT85N120A4HV Ultra Low-Vsat PT IGBT

1200V XPTTM GenX4TM IGBT Ultra Low-Vsat PT IGBT for up to 5kHz Switching IXYT85N120A4HV VCES = 1200V IC110 = 85A V  1.8V CE(sat) tfi(typ) = 280ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TSOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5 Clamped Inductive Load TC = 25°C Plastic Body for 10s Maximum.

IXYT85N120A4HV Features

* Optimized for Low Conduction Losses

* Positive Thermal Coefficient of Vce(sat)

* International Standard Package Advantages

* High Power Density

* Low Gate Drive Requirement Applications

* Power Inverters

* UPS

* Motor Drives

* SMPS

* PFC Circuits

* Batte