IXYT85N120A4HV - Ultra Low-Vsat PT IGBT
1200V XPTTM GenX4TM IGBT Ultra Low-Vsat PT IGBT for up to 5kHz Switching IXYT85N120A4HV VCES = 1200V IC110 = 85A V 1.8V CE(sat) tfi(typ) = 280ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TSOLD Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5 Clamped Inductive Load TC = 25°C Plastic Body for 10s Maximum
IXYT85N120A4HV Features
* Optimized for Low Conduction Losses
* Positive Thermal Coefficient of Vce(sat)
* International Standard Package Advantages
* High Power Density
* Low Gate Drive Requirement Applications
* Power Inverters
* UPS
* Motor Drives
* SMPS
* PFC Circuits
* Batte
