IXYX30N170CV1 IGBT

IXYS

Description

High Voltage XPTTM IGBT w/ Diode Preliminary Technical Information IXYX30N170CV1 VCES = 1700V IC110 = 30A VCE(sat)  3.7V tfi(typ) = 107ns Symb.

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Datasheet Specifications

Part number: IXYX30N170CV1
Manufacturer: IXYS
File Size: 199.01 KB
Datasheet: IXYX30N170CV1-IXYS.pdf
Description: IGBT

Features

* High Voltage Package
* High Blocking Voltage
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = 0.8

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2016 IXYS CORPORATION, All Rights Reserved DS100724A(7/16) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs

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IXYX30N170CV1 IGBT IXYS

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