* High Voltage Package
* High Blocking Voltage
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = 0.8
IXYX30N170CV1 Datasheet (199.01 KB)
IXYX30N170CV1
IXYS
199.01 KB
Igbt.
High Voltage XPTTM IGBT w/ Diode
Preliminary Technical Information
IXYX30N170CV1
VCES = 1700V IC110 = 30A VCE(sat) 3.7V tfi(typ) = 107ns
Symb.
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