IXFL82N60P Datasheet (IXYS Corporation)

IXFL82N60P, Power MOSFET

PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM (Electrically Isolated Back Surface) IXFL 82N60P VDSS = 600 V ID25 = 82 A RDS(on) ≤ 78 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS IISOL ≤1 mA Mounting force t = 1 min t=1s Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C T

IXFL82N60P Features

* l ISOPLUS264 TM (IXFL) G D S (Isolated Tab) G = Gate S = Source D = Drain l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switchin