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IXFL80N50Q2 Datasheet - IXYS Corporation

IXFL80N50Q2 HiPerFET Power MOSFET Q2-Class

HiPerFETTM Power MOSFET Q2-Class (Electrically Isolated Tab) IXFL80N50Q2 VDSS = ID25 = RDS(on) ≤ ≤ trr 500V 55A 66mΩ 250ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC VISOL 1.6 mm (0.063 in.) from case for 10s Plastic body for 10s Mounting force 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient T.

IXFL80N50Q2 Features

* Electrically isolated mounting tab Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Applications DC-DC converters Switched-mode and resonant-mode power supplies DC choppers Pulse generati

IXFL80N50Q2_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFL80N50Q2

Manufacturer:

IXYS Corporation

File Size:

154.33 KB

Description:

Hiperfet power mosfet q2-class.

IXFL80N50Q2 Distributor

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IXFL80N50Q2 IXFL80N50Q2 HiPerFET Power MOSFET Q2-Class IXYS Corporation