* l ISOPLUS264 TM (IXFL) G D S (Isolated Tab) G = Gate S = Source D = Drain l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switchin
IXFL82N60P Datasheet (197.18 KB)
IXFL82N60P
IXYS Corporation
197.18 KB
Power mosfet.
PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM (Electrically Isolated Back Surface) IXFL 82N60P VDSS = 600 V ID25 = 82 A RDS(on) ≤ 78 mΩ ≤ 200 ns trr .
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