IXFL82N60P Datasheet - IXYS Corporation

IXFL82N60P, Power MOSFET

PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM (Electrically Isolated Back Surface) IXFL 82N60P VDSS = 600 V ID25 = 82 A RDS(on) ≤ 78 mΩ ≤ 200 ns trr .

Features

* l ISOPLUS264 TM (IXFL) G D S (Isolated Tab) G = Gate S = Source D = Drain l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switchin

IXFL82N60P-IXYSCorporation.pdf