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IXTU01N100D, IXTY01N100D - N-Channel MOSFET

IXTU01N100D Description

Depletion Mode MOSFET N-Channel IXTY01N100D IXTU01N100D IXTP01N100D D G S Symbol VDSX VDGX VGSX VGSM IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Co.

IXTU01N100D Features

* Normally ON Mode
*  International Standard Packages
*  Low RDS(on) HDMOSTM Process
* Rugged Polysilicon Gate Cell Structure
* Fast Switching Speed Advantages
* Easy to Mount
* Space Savings

IXTU01N100D Applications

* Level Shifting
* Triggers
* Solid State Relays
* Current Regulators ©2019 IXYS CORPORATION, All Rights Reserved DS98809F(5/19) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 100V, ID = 100mA, Note 1 Ciss Coss Crss VGS = -10V, VDS =

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This datasheet PDF includes multiple part numbers: IXTU01N100D, IXTY01N100D. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXTU01N100D, IXTY01N100D
Manufacturer
IXYS Corporation
File Size
384.50 KB
Datasheet
IXTY01N100D_IXYSCorporation.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTU01N100D, IXTY01N100D.
Please refer to the document for exact specifications by model.

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