2SA1096 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA1096 .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min). Good Linearity of hFE. Complement to Type 2SC2497. Minimum Lot-to-Lot.

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Datasheet Specifications

Part number: 2SA1096
Manufacturer: Inchange Semiconductor
File Size: 215.03 KB
Datasheet: 2SA1096_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak

2SA1096 Distributors

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2SA1096 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1096-like datasheet