2SA1096 Datasheet - Inchange Semiconductor

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2SA1096 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA1096 .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min). Good Linearity of hFE. Complement to Type 2SC2497. Minimum Lot-to-Lot.

2SA1096_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA1096

Manufacturer:

Inchange Semiconductor

File Size:

215.03 KB

Description:

POWER TRANSISTOR

Applications

* Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak

2SA1096 Distributors

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2SA1096 POWER TRANSISTOR Inchange Semiconductor

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