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2SC5480 Silicon NPN Power Transistor

2SC5480 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5480 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. Built-in Damper Diode. 100% avalanche tested. Minimum Lot-to-L.

2SC5480 Applications

* Designed for horizontal deflection output stage applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC(peak) Collector Current-Peak 14 A IC(surge) Collector Current-Surge PC Collector P

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Datasheet Details

Part number
2SC5480
Manufacturer
Inchange Semiconductor
File Size
178.40 KB
Datasheet
2SC5480_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SC5480-like datasheet