2SC5480 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5480 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. Built-in Damper Diode. 100% avalanche tested. Minimum Lot-to-L.

📥 Download Datasheet

2SC5480 Datasheet Preview — Preview of 2SC5480 PDF

Datasheet Specifications

Part number: 2SC5480
Manufacturer: Inchange Semiconductor
File Size: 178.40 KB
Datasheet: 2SC5480_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for horizontal deflection output stage applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC(peak) Collector Current-Peak 14 A IC(surge) Collector Current-Surge PC Collector P

2SC5480 Distributors

📁 Related Datasheet

2SC5482 2SC5484 2SC5485 2SC5488 2SC5488A 2SC5489

📌 All Tags

2SC5480 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SC5480-like datasheet