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2SD1190 Datasheet - Inchange Semiconductor

2SD1190 - Silicon NPN Darlington Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *High DC Current Gain : hFE= 2000(Min) @IC= 2A *Low Saturation Voltage *Complement to Type 2SB880 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for motor d.

2SD1190_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD1190

Manufacturer:

Inchange Semiconductor

File Size:

191.15 KB

Description:

Silicon npn darlington power transistor.

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2SD1190 Silicon NPN Darlington Power Transistor Inchange Semiconductor