Datasheet4U Logo Datasheet4U.com

2SD1190 Datasheet - Inchange Semiconductor

2SD1190 Silicon NPN Darlington Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *High DC Current Gain : hFE= 2000(Min) @IC= 2A *Low Saturation Voltage *Complement to Type 2SB880 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for motor d.

2SD1190 Datasheet (191.15 KB)

Preview of 2SD1190 PDF
2SD1190 Datasheet Preview Page 2 2SD1190 Datasheet Preview Page 3

Datasheet Details

Part number:

2SD1190

Manufacturer:

Inchange Semiconductor

File Size:

191.15 KB

Description:

Silicon npn darlington power transistor.

📁 Related Datasheet

2SD1190 PNP/NPN Transistors (Sanyo Semicon Device)

2SD1191 PNP/NPN Transistors (Sanyo Semicon Device)

2SD1191 Silicon NPN Darlington Power Transistor (Inchange Semiconductor)

2SD1192 PNP/NPN Transistors (Sanyo Semicon Device)

2SD1192 Silicon NPN Darlington Power Transistor (Inchange Semiconductor)

2SD1193 PNP/NPN Transistors (Sanyo Semicon Device)

2SD1193 NPN Transistor (INCHANGE)

2SD1193 SILICON POWER TRANSISTOR (SavantIC)

TAGS

2SD1190 Silicon NPN Darlington Power Transistor Inchange Semiconductor

2SD1190 Distributor