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2SD1761 Silicon NPN Power Transistors

2SD1761 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min. Wide Area of Safe Operation. Complement to Type 2SB1187. Minimum Lot-to-L.

2SD1761 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Curre

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Datasheet Details

Part number
2SD1761
Manufacturer
Inchange Semiconductor
File Size
213.98 KB
Datasheet
2SD1761_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

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Silicon NPN Power Transistors Inchange Semiconductor
Inchange Semiconductor 2SD1761-like datasheet