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IRF630 - N-channel mosfet transistor

Features

  • With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS(ON)0.4 ;I D=9A 1.gate 2.drain 3.source ‹ Absolute Maximum Ratings Tc=25 SYMBOL VDSS VGS ID Ptot Tj Tstg.

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Full PDF Text Transcription

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MOSFET IRF630 N-channel mosfet transistor INCHANGE ‹ Features With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS(ON)0.4 ;I D=9A 1.gate 2.drain 3.source ‹ Absolute Maximum Ratings Tc=25 SYMBOL VDSS VGS ID Ptot Tj Tstg PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25 Total Dissipation@TC=25 Max. Operating Junction temperature Storage temperature RATING 200 20 9 74 150 -65~150 UNIT V V A W 123 TO-220 ‹ Electrical Characteristics Tc=25 SYMBOL PARAMETER V(BR)DSS Drain-source breakdown voltage CONDITIONS VGS=0; ID=0.25mA VGS(TH) Gate threshold voltage VDS= VGS; ID=1mA RDS(ON) Drain-source on-stage resistance VGS=10V; ID=5.
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