KTD718 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor KTD718 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Good Linearity of hFE. Complement to Type KTB688. Minimum Lot-to-Lot vari.

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KTD718 Datasheet Preview — Preview of KTD718 PDF

Datasheet Specifications

Part number: KTD718
Manufacturer: Inchange Semiconductor
File Size: 217.63 KB
Datasheet: KTD718-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Audio frequency power amplifier applications
* Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage

KTD718 Distributors

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KTD718 Silicon NPN Power Transistors Inchange Semiconductor

Inchange Semiconductor KTD718-like datasheet