MJD50 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistors .
DC Current Gain -hFE = 30~150@ IC= 0. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min). DPAK for Surface Mount Applicatio.

📥 Download Datasheet

MJD50 Datasheet Preview — Preview of MJD50 PDF

Datasheet Specifications

Part number: MJD50
Manufacturer: Inchange Semiconductor
File Size: 186.24 KB
Datasheet: MJD50-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
* Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collect

MJD50 Distributors

📁 Related Datasheet

MJD50TF MJD5731 MJD112 MJD112L MJD112T4 MJD117

📌 All Tags

MJD50 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor MJD50-like datasheet