3DD5E Silicon NPN Power Transistor

Inchange

Description

isc Silicon NPN Power Transistor 3DD5E .
Excellent safe operating area. Low Collector-Emitter Saturation Voltage. Minimum Lot-to-Lot variations for robust device performance and.

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Datasheet Specifications

Part number: 3DD5E
Manufacturer: Inchange
File Size: 230.18 KB
Datasheet: 3DD5E-Inchange.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector P

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3DD5E Silicon NPN Power Transistor Inchange

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