Datasheet4U Logo Datasheet4U.com

2SA1104 - POWER TRANSISTOR

2SA1104 Description

isc Silicon PNP Power Transistor 2SA1104 .
Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min). Good Linearity of hFE. High Power Dissipation. Minimum Lot-to-Lot variatio.

2SA1104 Applications

* Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A IB Base Current-Contin

📥 Download Datasheet

Preview of 2SA1104 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • 2SA1102 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1103 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1105 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1106 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1107 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1108 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1109 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SA1110 - PNP Transistor (Panasonic Semiconductor)

📌 All Tags

POWER TRANSISTOR Inchange Semiconductor
Inchange Semiconductor 2SA1104-like datasheet