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2SD1517 - Power Transistor

2SD1517 Description

isc Silicon NPN Power Transistor .
Low Collector Saturation Voltage : VCE(sat)= 0. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min). Good Linearit.

2SD1517 Applications

* Designed for power amplifier,power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A ICM Collector Cu

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Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD1517-like datasheet