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2SD860 - Power Transistor

2SD860 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min). High Collector Power Dissipation. Minimum Lot-to-Lot variations for robust de.

2SD860 Applications

* Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak

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Datasheet Details

Part number
2SD860
Manufacturer
Inchange Semiconductor
File Size
213.00 KB
Datasheet
2SD860_InchangeSemiconductor.pdf
Description
Power Transistor

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Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD860-like datasheet

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