Datasheet4U Logo Datasheet4U.com

GT43 Silicon NPN Darlington Power Transistor

GT43 Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). High DC Current Gain : hFE= 2000(Min. Low Collector Saturation Volt.

GT43 Applications

* Switching for dynamotor excitation
* General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB

📥 Download Datasheet

Preview of GT43 PDF
datasheet Preview Page 2

Datasheet Details

Part number
GT43
Manufacturer
Inchange Semiconductor
File Size
195.79 KB
Datasheet
GT43-InchangeSemiconductor.pdf
Description
Silicon NPN Darlington Power Transistor

📁 Related Datasheet

  • GT400P10 - P-Channel Enhancement Mode Power MOSFET (GOFORD)
  • GT400P10T - P-Channel Enhancement Mode Power MOSFET (GOFORD)
  • GT4050D - Photovoltaic bypass module diode (GREATEEN)
  • GT40G121 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT40J121 - Silicon N-Channel IGBT (Toshiba)
  • GT40J321 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT40J322 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT40M101 - SILICON N-CHANNEL IGBT (Toshiba Semiconductor)

📌 All Tags

Silicon NPN Darlington Power Transistor Inchange Semiconductor
Inchange Semiconductor GT43-like datasheet