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TIP3055T Silicon NPN Power Transistor

TIP3055T Description

isc Silicon NPN Power Transistor .
Excellent Safe Operating Area. DC Current Gain- : hFE=20-70@IC = 4A. Collector-Emitter Saturation Voltage- : VCE(sat)= 0.

TIP3055T Applications

* Designed for general-purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-base Voltage 5 V IC Collector Current-Continuous 10 A IC Collect

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Datasheet Details

Part number
TIP3055T
Manufacturer
Inchange Semiconductor
File Size
214.73 KB
Datasheet
TIP3055T-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor TIP3055T-like datasheet