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BGA5H1BN6 - 18dB High Gain Low Noise Amplifier

BGA5H1BN6 Description

BGA5H1BN6 BGA5H1BN6 18dB High Gain Low Noise Amplifier for LTE Highband .
The BGA5H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 2300 MHz to 2690 MHz.

BGA5H1BN6 Features

* Operating frequencies: 2300 - 2690 MHz
* Insertion power gain: 18.1 dB
* Insertion Loss in bypass mode: 5.2 dB
* Low noise figure: 0.7 dB
* Low current consumption: 8.5 mA
* Multi-state control: Bypass- and high gain-Mode
* Ultra small TSNP-

BGA5H1BN6 Applications

* according to the relevant tests of JEDEC47/20/22 Block diagram VCC C AI ESD Data Sheet www. infineon. com AO GND BGA5H1BN6_Blockdiagram. vsd Revision 2.2 2018-03-15 BGA5H1BN6 18dB High Gain Low Noise Amplifier for LTE Highband Table of Contents Table of Contents Table of Contents

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18dB High Gain Low Noise Amplifier Infineon
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