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BGA5L1BN6 - 18dB High Gain Low Noise Amplifier

BGA5L1BN6 Description

BGA5L1BN6 BGA5L1BN6 18dB High Gain Low Noise Amplifier for LTE Lowband .

BGA5L1BN6 Features

* Operating frequencies: 600 - 1000 MHz
* Insertion power gain: 18.5 dB
* Insertion Loss in bypass mode: 2.7 dB
* Low noise figure: 0.7 dB
* Low current consumption: 8.2 mA
* Multi-state control: Bypass- and high gain-Mode
* Ultra small TSNP-6-

BGA5L1BN6 Applications

* according to the relevant tests of JEDEC47/20/22 Block diagram VCC C AI ESD

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18dB High Gain Low Noise Amplifier Infineon
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