BGA5M1BN6 18dB High Gain Low Noise Amplifier

Infineon

Description

BGA5M1BN6 BGA5M1BN6 18dB High Gain Low Noise Amplifier for LTE Midband .

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BGA5M1BN6 Datasheet Preview — Preview of BGA5M1BN6 PDF

Datasheet Specifications

Part number: BGA5M1BN6
Manufacturer: Infineon ↗
File Size: 287.53 KB
Datasheet: BGA5M1BN6-Infineon.pdf
Description: 18dB High Gain Low Noise Amplifier

Features

* Operating frequencies: 1805 - 2200 MHz
* Insertion power gain: 19.3 dB
* Insertion Loss in bypass mode: 4.7 dB
* Low noise figure: 0.65 dB
* Low current consumption: 9.5 mA
* Multi-state control: Bypass- and high gain-Mode
* Ultra small TSNP-

Applications

* according to the relevant tests of JEDEC47/20/22 Block diagram VCC C AI E

BGA5M1BN6 Distributors

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BGA5M1BN6 18dB High Gain Low Noise Amplifier Infineon

Infineon BGA5M1BN6-like datasheet