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BGA5M1BN6 - 18dB High Gain Low Noise Amplifier

BGA5M1BN6 Description

BGA5M1BN6 BGA5M1BN6 18dB High Gain Low Noise Amplifier for LTE Midband .

BGA5M1BN6 Features

* Operating frequencies: 1805 - 2200 MHz
* Insertion power gain: 19.3 dB
* Insertion Loss in bypass mode: 4.7 dB
* Low noise figure: 0.65 dB
* Low current consumption: 9.5 mA
* Multi-state control: Bypass- and high gain-Mode
* Ultra small TSNP-

BGA5M1BN6 Applications

* according to the relevant tests of JEDEC47/20/22 Block diagram VCC C AI E

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18dB High Gain Low Noise Amplifier Infineon
Infineon BGA5M1BN6-like datasheet