IFS100B12N3E4_B31 - IGBT
Technische Information / Technical Information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ™base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current sense shunt Vorläufige Daten / Preliminary Data J VCES = 1200V IC nom = 100A / ICRM = 200A Typische Anwendungen Motorantriebe Servoumrichter Elektrische Eigenschaften Niedrige Schaltve
IFS100B12N3E4_B31 Features
* Low Switching Losses
* Tvj op = 150°C
* Low VCEsat Mechanical Features
* High Power and Thermal Cycling Capability
* Isolated Base Plate
* Copper Base Plate
* Standard Housing Module Label Code Barcode Code 128 DMX - Code prepared by: CM app
