IFS100B12N3E4_B31 Datasheet - Infineon

IFS100B12N3E4_B31 IGBT

Technische Information / Technical Information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ™base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current sense shunt Vorläufige Daten / Preliminary Data J VCES = 1200V IC nom = 100A / ICRM = 200A Typische Anwendungen Motorantriebe Servoumrichter Elektrische Eigenschaften Niedrige Schaltve.

IFS100B12N3E4_B31 Features

* Low Switching Losses

* Tvj op = 150°C

* Low VCEsat Mechanical Features

* High Power and Thermal Cycling Capability

* Isolated Base Plate

* Copper Base Plate

* Standard Housing Module Label Code Barcode Code 128 DMX - Code prepared by: CM app

IFS100B12N3E4_B31-Infineon.pdf